r07ds1319ej0100 rev.1.00 page 1 of 6 jan 25, 2016 data sheet pa2735gr p-channel mosfet ?30 v, ?16 a, 5.0 m description the pa2735gr is p-channel mos field effect transistor designed for dc/dc converter and power management applications of portable equipment. features ? v dss = ? 30 v (t a = 25 c) ? low on-state resistance ? r ds(on) = 5.0 m max. (v gs = ? 10 v, i d = ? 16 a) ? 4.5 v gate-drive available ? small and surface mount package (sop-8) ? pb-free and halogen free ordering information part no. lead plating packing package pa2735gr-e1-ax ni / pd / au tape 2500 p/reel sop-8 0.085 g typ. pa2735gr-e2-ax absolute maximum ratings (t a = 25 c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss ? 30 v gate to source voltage (v ds = 0 v) v gss m 20 v drain current (dc) i d(dc) m 16 a drain current (pulse) ? 1 i d(pulse) m 150 a total power dissipation ? 2 p t1 1.1 w total power dissipation (pw = 10 sec) ? 2 p t2 2.5 w channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c single avalanche current ? 3 i as 16 a single avalanche energy ? 3 e as 25.6 mj thermal resistance channel to ambient thermal resistance ?2 r th(ch-a) 114 c/w notes: ? 1. pw 10 s, duty cycle 1% ? 2. mounted on a glass epoxy boar d of 25.4 mm x 25.4 mm x 0.8 mmt ? 3. starting t ch = 25 c, v dd = ? 15 v, r g = 25 , v gs = ? 20 0 v, l = 100 h r07ds1319ej0100 rev.1.00 jan 25, 2016 power sop8
pa2735gr r07ds1319ej0100 rev.1.00 page 2 of 6 jan 25, 2016 electrical characteristics (t a = 25 c) item symbol min. typ. max. unit test conditions zero gate voltage drain current i dss ? 1 a v ds = ? 30 v, v gs = 0 v gate leakage current i gss m 100 na v gs = m 20 v, v ds = 0 v gate cut-off voltage v gs(off) ? 1.0 ? 2.5 v v ds = ? 10 v, i d = ? 1 ma forward transfer admittance ? ? 10 v, i d = ? 8.0 a drain to source on-state resistance ? 1 r ds(on)1 3.8 5.0 m v gs = ? 10 v, i d = ? 16 a r ds(on)2 5.1 7.8 m v gs = ? 4.5 v, i d = ? 16 a input capacitance c iss 6250 pf v ds = ? 10 v, output capacitance c oss 3900 pf v gs = 0 v, reverse transfer capacitance c rss 2850 pf f = 1 mhz turn-on delay time t d(on) 35 ns v dd = ? 15 v, i d = ? 8.0 a, v gs = ? 10 v, rise time t r 85 ns turn-off delay time t d(off) 300 ns r g = 10 fall time t f 400 ns total gate charge q g 195 nc v dd = ? 24 v, gate to source charge q gs 15 nc v gs = ? 10 v, gate to drain charge q gd 100 nc i d = ? 16 a body diode forward voltage ? s note: ? 1. pulsed test circuit 1 avalanche capability r g = 25 50 l v dd v gs = ? 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form v ds wave form v gs ( ? ) 10% 90% v gs 10% 0 v ds ( ? ) 90% 90% t d(on) t r t d(off) t f 10% v ds 0 t on t off pg. pg. 50 d.u.t. r l v dd i g = ? 2 ma ?
pa2735gr r07ds1319ej0100 rev.1.00 page 3 of 6 jan 25, 2016 typical characteristics (t a = 25c) derating factor of forward bias safe operating area forward bias safe operating area dt - percentage of rated power - % 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 175 t a - ambient temperature - c i d - drain current - a -0.01 -0.1 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100 single pulse t a = 25 c mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt power dissipation limited i d(pulse) = ?150 a pw = 100 s 100 ms i d(dc) = ?16 a 1 m s 30 ms 1 0 m s d c r d s ( o n ) l i m i t e d ( v g s = ? 1 0 v ) v ds - drain to source voltage ? v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) = 114 oc/w r th(ch-a) mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt single pulse pw - pulse width - s drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a -0 -50 -100 -150 -0 -0.5 -1 -1.5 pulsed ?4.5 v v gs = ?10 v v ds - drain to source voltage - v i d - drain current - a -0.001 -0.01 -0.1 -1 -10 -100 -0 -1 -2 -3 -4 t a = 150 c 75 c 25 c ? 55 c pu ls e d v ds = ?10 v v gs - gate to source voltage - v 100 1 m 10 m 100 m 1 10 100 1000
pa2735gr r07ds1319ej0100 rev.1.00 page 4 of 6 jan 25, 2016 gate to source cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) ? gate to source cut-off voltage - v -0 -1 -2 -3 -50 0 50 100 150 pulsed v ds = ?10 v i d = ?1 ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.1 1 10 100 -0.01 -0.1 -1 -10 pulsed v ds = ?10v t a = 150 c 75 c 25 c ?55 c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 10 -1 -10 -100 -1000 pulsed ?10 v v gs = ?4.5 v i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 10 12 14 16 -0 -5 -10 -15 -20 pulsed i d = ?16 a v gs - gate to source voltage - v drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 10 -50 0 50 100 150 pulsed i d = ?16 a v gs = ?4.5 v v gs = ?10 v t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 100 1000 10000 -0.1 -1 -10 -100 v gs = 0 v f = 1 mhz c rss c iss c oss v ds - drain to source voltage - v
pa2735gr r07ds1319ej0100 rev.1.00 page 5 of 6 jan 25, 2016 dynamic input/output characteristics source to drain diode forward voltage v ds - drain to source voltage - v -0 -5 -10 -15 -20 -25 0 50 100 150 200 -0 -2 -4 -6 -8 -10 i d = ?16 a v dd = ?24 v ? 15 v ? 6 v v gs v ds q g - gate charge - nc v gs - gate to source voltage - v i f - diode forward current - a 1 10 100 1000 0 0.4 0.8 1.2 pulsed v gs = ?10 v 0 v ?4.5 v v f(s-d) - source to drain voltage - v
pa2735gr r07ds1319ej0100 rev.1.00 page 6 of 6 jan 25, 2016 package drawings (unit: mm) sop-8 equivalent circuit source body diode gate drain remark strong electric field, when exposed to this devic e, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickl y dissipate it once, when it has occurred. 1, 2, 3 source 4 gate 5, 6, 7, 8 darin p-sop8-3.95 4.9-1.27 0.085g mass[typ.] fp-8dav prsp0008dd-d renesas code jeita package code previous code a 8 5 1 4 f b p c detail f terminal cross section 1.27 1.08 0.40 l 1 0.60 0.25 x 0.46 0.40 0.34 0.10 b p b 1 c 1 0.25 0.20 0.15 max nom min dimension in millimeters symbol reference 5.3 4.90 d 3.95 e 0.14 a 2 6.20 6.10 5.80 0.25 1.75 a 0.75 z l 8 0 c 1.27 e 0.1 y h e a 1 d * 1 * 2 e h e * 3 x m b p e z (ni/pd/au plating) 2. 1. dimensions "*1(nom)" and "*2" do not include mold flash. note) dimension "*3" does not include trim offset. index mark a 1 l 1 l detail f y package name sop-8
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